Anderson localization in doped semiconductors
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DOI: 10.1103/physrevb.107.174204
Abstract: We theoretically consider the problem of doping induced insulator to metal transition in bulk semiconductors by obtaining the transition density as a function of compensation, assuming that the transition is an Anderson localization transition controlled… read more here.
Keywords: localization doped; localization; density; anderson localization ... See more keywords
Origin of localization in Ti-doped Si
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DOI: 10.1103/physrevb.98.174204
Abstract: Intermediate band semiconductors hold the promise to significantly improve the efficiency of solar cells, but only if the intermediate impurity band is metallic. We apply a recently developed first principles method to investigate the origin… read more here.
Keywords: band solar; localization doped; localization; intermediate band ... See more keywords