Investigation of carrier localization in InAs/AlSb type-II superlattice material system
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DOI: 10.1063/1.5127198
Abstract: We investigate carrier localization in the InAs/AlSb type-II superlattice (T2SL) material system using temperature- and excitation power (Iex)-dependent photoluminescence (PL). Evidence of carrier localization in T2SLs was observed by an S-shaped temperature dependence of the… read more here.
Keywords: carrier; localization; carrier localization; localization inas ... See more keywords