Auger recombination in AlGaN quantum wells for UV light-emitting diodes
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DOI: 10.1063/1.5044383
Abstract: We show that the often observed efficiency droop in AlGaN quantum well heterostructures is an internal carrier loss process, analogous to the InGaN system. We attribute this loss process to Auger recombination, with C = 2.3 × 10−30 cm6 s−1;… read more here.
Keywords: loss process; recombination; algan quantum; carrier ... See more keywords