Passivating and low damaging plasma etching of GaN using Cl2 and SiCl4 for recessed gate MOSc-HEMT devices
Sign Up to like & getrecommendations! Published in 2024 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ad8303
Abstract: Plasma etching steps are critical for metal–oxide–semiconductor channel high electron mobility transistors gate fabrication as they can deteriorate electrical performances due to gallium nitride degradation. Adding SiCl4 to a low bias Cl2 plasma in presence… read more here.
Keywords: damaging plasma; plasma; sicl4; low damaging ... See more keywords