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Published in 2020 at "Advanced Optical Materials"
DOI: 10.1002/adom.202000519
Abstract: A near‐infrared photodetector with optimized performance is reported using varied thickness (20, 40, 60, and 80 nm) of the active layer comprising chloroaluminium phthalocyanine (ClAlPc) and fullerene (C70) at the ratio of 1:3, and TAPC:10%…
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Keywords:
current density;
response;
small molecule;
dark current ... See more keywords
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Published in 2019 at "Optoelectronics Letters"
DOI: 10.1007/s11801-019-8106-5
Abstract: Au nanoparticles doped TiO2 nanowires (NWs) arrays with an average diameter of 100 nm were synthesized through a facile solvothermal method. Thereafter, metal/semiconductor/metal (MSM) structured detectors with Ag electrodes were fabricated on these NWs. The…
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Keywords:
dark current;
doped tio2;
tio2 nanowires;
ultraviolet photodetector ... See more keywords
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Published in 2022 at "ACS Applied Materials & Interfaces"
DOI: 10.1021/acsami.2c10197
Abstract: Organic materials combining high electron affinity with strong absorption in the visible spectrum are of interest for photodetector applications. In this study, we report two such molecular semiconductors, based upon an acceptor–donor–acceptor (A-D-A) approach. Coupling…
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Keywords:
dark current;
acceptor;
low dark;
current organic ... See more keywords
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Published in 2023 at "ACS nano"
DOI: 10.1021/acsnano.2c12178
Abstract: Low-dimensional materials with excellent optoelectronic properties and complementary metal-oxide-semiconductor (CMOS) process compatibility have the potential to construct high-performance photodetectors used in a cost-efficient monolithic or hybrid integrated optical communication system. Carbon nanotubes (CNTs) have attracted…
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Keywords:
carbon;
low dark;
bandwidth;
waveguide integrated ... See more keywords
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Published in 2020 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ab6bf7
Abstract: Germanium on silicon P-i-N photodetectors fabricated using standard CMOS tools are now successfully used as uncooled detectors in the near-infrared (NIR), which extends from 0.75 to 1.4 μm and in the short-wave infrared (SWIR), which…
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Keywords:
fabrication characterization;
low dark;
spectroscopy;
germanium ... See more keywords
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Published in 2018 at "Optics express"
DOI: 10.1364/oe.26.005827
Abstract: This work designed an ITO/Ag/n-Si Schottky photodetector with broad wavelength detection and low dark current. The introduction of Ag interfacial layer and post rapid thermal annealing dramatically increase the barrier height of ITO/n-Si Schottky diode…
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Keywords:
ito schottky;
360 1650;
low dark;
dark current ... See more keywords
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Published in 2018 at "Optics express"
DOI: 10.1364/oe.26.013605
Abstract: Top-illuminated PIN and modified uni-traveling carrier (MUTC) photodiodes based on InGaAs/InAlAs/InP were epitaxially grown on Si templates. Photodiodes with 30-μm diameter have dark currents as low as 10 nA at 3 V corresponding to a…
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Keywords:
dark current;
photodiodes heteroepitaxy;
silicon photodiodes;
current iii ... See more keywords
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Published in 2022 at "Optics express"
DOI: 10.1364/oe.461169
Abstract: A high performance AlGaN-based back-illuminated solar-blind ultraviolet (UV) p-i-n photodetectors (PDs) are fabricated on sapphire substrates. The fabricated PD exhibits ultra-low dark current of less than 0.15 pA under -5 V bias, which corresponds to…
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Keywords:
back illuminated;
low dark;
algan based;
response ... See more keywords
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Published in 2022 at "Optics letters"
DOI: 10.1364/ol.454717
Abstract: In this work, we have proposed and fabricated a metal/Ga2O3/GaN hybrid structure metal-semiconductor-metal ultraviolet photodetector with low dark current and high responsivity. The Schottky contact of Ni/Ga2O3 makes the Ga2O3 layer fully depleted. The strong…
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Keywords:
ga2o3 gan;
low dark;
ga2o3;
metal ga2o3 ... See more keywords