Polarization compensation at low p-GaN doping density in InGaN/GaN p-i-n solar cells: Effect of InGaN interlayers
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DOI: 10.1016/j.spmi.2017.04.014
Abstract: Abstract The effectiveness of polarization matching layer (PML) between i-InGaN/p-GaN is studied numerically for Ga-face InGaN/GaN p-i-n solar cell at low p-GaN doping (∼5e17 cm −3 ). The simulations are performed for four In x Ga… read more here.
Keywords: doping density; low gan; ingan gan; gan doping ... See more keywords