Low residual stress in hydrogenated amorphous silicon-carbon films deposited by low-temperature PECVD
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Materials Research and Technology"
DOI: 10.1016/j.jmrt.2019.09.026
Abstract: Abstract Low residual stress in hydrogenated amorphous silicon-carbon (a-SixC1-x:H) films prepared by plasma-enhanced chemical vapor deposition (PECVD) at temperature range of 100–200 °C was obtained. Profilometry, Fourier transform infrared (FTIR) spectroscopy and atomic force microscopy (AFM)… read more here.
Keywords: carbon; temperature; pecvd; residual stress ... See more keywords