Damage-Free Full-Thickness Dicing of Ultra-Thin GaAs Wafers Using a Femtosecond Laser with Low Residual Stress.
Sign Up to like & getrecommendations! Published in 2025 at "Advanced science"
DOI: 10.1002/advs.202515347
Abstract: Gallium arsenide (GaAs) is a widely used semiconductor material due to its low-temperature coefficient and high absorption efficiency. However, its hardness and brittleness create challenges in wafer-level packaging, especially for large-size and ultra-thin GaAs wafers.… read more here.
Keywords: ultra thin; thin gaas; low residual; femtosecond laser ... See more keywords
Low residual stress in hydrogenated amorphous silicon-carbon films deposited by low-temperature PECVD
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Materials Research and Technology"
DOI: 10.1016/j.jmrt.2019.09.026
Abstract: Abstract Low residual stress in hydrogenated amorphous silicon-carbon (a-SixC1-x:H) films prepared by plasma-enhanced chemical vapor deposition (PECVD) at temperature range of 100–200 °C was obtained. Profilometry, Fourier transform infrared (FTIR) spectroscopy and atomic force microscopy (AFM)… read more here.
Keywords: carbon; temperature; pecvd; residual stress ... See more keywords