Regrown Vertical GaN p–n Diodes with Low Reverse Leakage Current
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DOI: 10.1007/s11664-019-07098-6
Abstract: Vertical c-plane GaN p–n diodes, where the p-GaN layer is formed by epitaxial regrowth using metal–organic chemical-vapor deposition, are reported. Current–voltage (I–V) performance similar to continuously grown p–n diodes is demonstrated, including low reverse leakage… read more here.
Keywords: leakage; regrowth; gan diodes; low reverse ... See more keywords