High-mobility and low subthreshold swing amorphous InGaZnO thin-film transistors by in situ H2 plasma and neutral oxygen beam irradiation treatment
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DOI: 10.1088/1361-6528/acb5f9
Abstract: In this work, staggered bottom-gate structure amorphous In–Ga–Zn–O (a-IGZO) thin film transistors (TFTs) with high-k ZrO2 gate dielectric were fabricated using low-cost atmospheric pressure-plasma enhanced chemical vapor deposition (AP-PECVD) with in situ hydrogenation to modulate… read more here.
Keywords: neutral oxygen; low subthreshold; oxygen beam; subthreshold swing ... See more keywords