Low threading dislocation density and antiphase boundary free GaAs epitaxially grown on on-axis Si (001) substrates.
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DOI: 10.1039/d2nr04866c
Abstract: Epitaxial growth of III-V materials on a CMOS-compatible Si (001) substrate enables the feasibility of mass production of low-cost and high-yield Si-based III-V optoelectronic devices. However, the material dissimilarities between III-V and group-IV materials induce… read more here.
Keywords: 001 substrates; density; axis 001; low threading ... See more keywords