Improvement in Switching Characteristics and Bias Stability of Solution-Processed Zinc–Tin Oxide Thin Film Transistors via Simple Low-Pressure Thermal Annealing Treatment
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DOI: 10.3390/nano13111722
Abstract: In this study, we used a low-pressure thermal annealing (LPTA) treatment to improve the switching characteristics and bias stability of zinc–tin oxide (ZTO) thin film transistors (TFTs). For this, we first fabricated the TFT and… read more here.
Keywords: thermal annealing; low pressure; lpta treatment; pressure thermal ... See more keywords