Post-annealing optimization of the heteroepitaxial La-doped SrSnO3 integrated on silicon via ALD.
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DOI: 10.1039/d2nr06861c
Abstract: Wide band gap (WBG) alkaline-earth stannate transparent oxide semiconductors (TOSs) have attracted increasing attention in recent years for their high carrier mobility and outstanding optoelectronic properties, and have been applied widely in various devices, such… read more here.
Keywords: lsso bto; doped srsno3; ald; post ... See more keywords