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Published in 2022 at "Micromachines"
DOI: 10.3390/mi13030344
Abstract: In this paper, an L-shaped tunneling field effect transistor (LTFET) with ferroelectric gate oxide layer (Si: HfO2) is proposed. The electric characteristic of NC-LTFET is analyzed using Synopsys Sentaurus TCAD. Compared with the conventional LTFET,…
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Keywords:
ltfet;
gradient effect;
polarization gradient;