Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device
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DOI: 10.1002/aelm.202000066
Abstract: In this study, a one transistor one resistor (1T1R) structure combining a fin‐like low‐temperature polycrystalline‐silicon (LTPS) transistor and a resistive random access memory (RRAM) is successfully fabricated. For the fin‐like LTPS transistor, both n‐type and… read more here.
Keywords: fin like; structure; resistive random; ltps transistor ... See more keywords