Structure and luminescence of a-plane GaN on r-plane sapphire substrate modified by Si implantation
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DOI: 10.1088/1674-1056/abd76a
Abstract: We show the structural and optical properties of non-polar a-plane GaN epitaxial films modified by Si ion implantation. Upon gradually raising Si fluences from 5 × 1013 cm−2 to 5 × 1015 cm−2, the n-type… read more here.
Keywords: luminescence plane; structure luminescence; implantation; plane ... See more keywords