Formation of luminescent defects in 4H-SiC upon ion irradiation and ns laser annealing
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DOI: 10.1038/s41598-025-23259-6
Abstract: We present a novel approach for the optical activation of the negatively-charged silicon vacancy ( VSi−) center in ion irradiated silicon carbide (SiC) via ns-pulsed laser annealing in the 234–2180 mJ cm− 2 energy density range.… read more here.
Keywords: laser; defects sic; luminescent defects; laser annealing ... See more keywords