Study on Improving the Precise Machinability of Single Crystal SiC by an Ultrasonic-Assisted Hybrid Process
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DOI: 10.3390/ma14237320
Abstract: Silicon carbide (SiC) devices have become one of the key research directions in the field of power electronics. However, due to the limitation of the SiC wafer growth process and processing capacity, SiC devices, such… read more here.
Keywords: machinability single; ultrasonic assisted; process; hybrid process ... See more keywords