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Published in 2018 at "Carbon"
DOI: 10.1016/j.carbon.2018.08.013
Abstract: Abstract Silicon-vacancy (SiV) centred diamond exhibits near infrared emission at 738 nm with narrower zero-phonon line and shorter lifetime comparative with nitrogen-vacancy (NV) centre, considered as a promising room-temperature single-photon source. However, unlike NV centred nanodiamonds…
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Keywords:
vacancy;
synthesis ultrafine;
silicon vacancy;
made synthesis ... See more keywords