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Published in 2024 at "Advanced Functional Materials"
DOI: 10.1002/adfm.202404679
Abstract: Synthetic antiferromagnet (SAF) with high thermal stability, ultra‐fast spin dynamics, and highly efficient spin‐orbit torque switching has great application potential in neuromorphic computing hardware. However, two challenges, the weakening of Hall signal in the remanent…
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Keywords:
spin orbit;
magnetic field;
neuromorphic computing;
magnetization switching ... See more keywords
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Published in 2018 at "Advanced materials"
DOI: 10.1002/adma.201804004
Abstract: All-optical ultrafast magnetization switching in magnetic material thin film without the assistance of an applied external magnetic field is explored for future ultrafast and energy-efficient magnetic storage and memories. It is shown that femtosecond (fs)…
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Keywords:
multi level;
magnetization switching;
level optical;
single shot ... See more keywords
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Published in 2024 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202400314
Abstract: Orbitronics is an emerging domain within spintronics, and it is characterized by a rapid development of methods for utilizing orbital current. Metals with strong spin‐orbit coupling have been effectively used to convert orbital current into…
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Keywords:
efficiency;
orbital current;
current boosting;
magnetization switching ... See more keywords
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Published in 2019 at "Journal of Superconductivity and Novel Magnetism"
DOI: 10.1007/s10948-018-4726-4
Abstract: The dynamic magnetization switching of antiferromagnetic nickel oxide nanoparticles with a characteristic size of 8 nm has been experimentally investigated by pulsed field magnetometry. It is shown that, due to the presence of defects in…
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Keywords:
field;
dynamic magnetization;
pulsed field;
magnetization switching ... See more keywords
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Published in 2020 at "Journal of Magnetism and Magnetic Materials"
DOI: 10.1016/j.jmmm.2020.167307
Abstract: Abstract We report on the investigations of a system of 8-nm NiO particles representing antiferromagnetic (AFM) materials, which are weak magnetic in the form of submicron particles, but can be considered to be magnetoactive in…
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Keywords:
interaction magnetic;
quasi static;
field;
magnetization switching ... See more keywords
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Published in 2020 at "Thin Solid Films"
DOI: 10.1016/j.tsf.2020.137889
Abstract: Abstract In this work, large-area ferrite thin films of ferromagnetic yttrium iron garnet (Y3Fe5O12, YIG) were synthesized on Pt/Ti/SiO2/Si (Pt) substrates by a sol-gel method to investigate the resistive and magnetization switching properties. The synthesized…
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Keywords:
thin films;
resistive magnetization;
yttrium iron;
magnetization switching ... See more keywords
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Published in 2024 at "Nano letters"
DOI: 10.1021/acs.nanolett.4c01100
Abstract: Spin-orbit torque magnetic random access memory (SOT-MRAM) has great promise in high write speed and low power consumption. Mo can play a vital role in constructing a CoFeB/MgO-based MRAM cell because of its ability to…
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Keywords:
efficiency;
orbit torque;
spin orbit;
orbit ... See more keywords
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Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.1c22061
Abstract: Field-free magnetization switching is critical towards practical, integrated spin-orbit torque (SOT)-driven magnetic random-access memory with perpendicular magnetic anisotropy. Our work proposes a technique to modulate the spin reflection and spin density of states within a…
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Keywords:
magnetization switching;
free magnetization;
field free;
field ... See more keywords
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Published in 2017 at "Nature Communications"
DOI: 10.1038/ncomms14567
Abstract: Ferromagnets are commonly magnetized by either external magnetic fields or spin polarized currents. The manipulation of magnetization by spin-current occurs through the spin-transfer-torque effect, which is applied, for example, in modern magnetoresistive random access memory.…
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Keywords:
external magnetic;
chiral molecules;
switching ferromagnets;
magnetization switching ... See more keywords
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Published in 2017 at "Nature Communications"
DOI: 10.1038/s41467-017-01583-4
Abstract: Topological insulators with spin-momentum-locked topological surface states are expected to exhibit a giant spin-orbit torque in the topological insulator/ferromagnet systems. To date, the topological insulator spin-orbit torque-driven magnetization switching is solely reported in a Cr-doped…
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Keywords:
spin orbit;
magnetization switching;
topological insulator;
insulator ... See more keywords
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Published in 2024 at "Scientific Reports"
DOI: 10.1038/s41598-024-65634-9
Abstract: In traditional von Neumann computing architecture, the efficiency of the system is often hindered by the data transmission bottleneck between the processor and memory. A prevalent approach to mitigate this limitation is the use of…
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Keywords:
memory;
spintronic logic;
precessional magnetization;
reconfigurable spintronic ... See more keywords