Articles with "magnetization switching" as a keyword



Neuromorphic Computing in Synthetic Antiferromagnets by Spin‐Orbit Torque Induced Magnetic‐Field‐Free Magnetization Switching

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Published in 2024 at "Advanced Functional Materials"

DOI: 10.1002/adfm.202404679

Abstract: Synthetic antiferromagnet (SAF) with high thermal stability, ultra‐fast spin dynamics, and highly efficient spin‐orbit torque switching has great application potential in neuromorphic computing hardware. However, two challenges, the weakening of Hall signal in the remanent… read more here.

Keywords: spin orbit; magnetic field; neuromorphic computing; magnetization switching ... See more keywords
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Single-Shot Multi-Level All-Optical Magnetization Switching Mediated by Spin Transport.

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Published in 2018 at "Advanced materials"

DOI: 10.1002/adma.201804004

Abstract: All-optical ultrafast magnetization switching in magnetic material thin film without the assistance of an applied external magnetic field is explored for future ultrafast and energy-efficient magnetic storage and memories. It is shown that femtosecond (fs)… read more here.

Keywords: multi level; magnetization switching; level optical; single shot ... See more keywords

Orbital Current Boosting Magnetization Switching Efficiency in Metallic Superlattices

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Published in 2024 at "Advanced Electronic Materials"

DOI: 10.1002/aelm.202400314

Abstract: Orbitronics is an emerging domain within spintronics, and it is characterized by a rapid development of methods for utilizing orbital current. Metals with strong spin‐orbit coupling have been effectively used to convert orbital current into… read more here.

Keywords: efficiency; orbital current; current boosting; magnetization switching ... See more keywords

Dynamic Magnetization Switching in NiO Nanoparticles: Pulsed Field Magnetometry Study

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Published in 2019 at "Journal of Superconductivity and Novel Magnetism"

DOI: 10.1007/s10948-018-4726-4

Abstract: The dynamic magnetization switching of antiferromagnetic nickel oxide nanoparticles with a characteristic size of 8 nm has been experimentally investigated by pulsed field magnetometry. It is shown that, due to the presence of defects in… read more here.

Keywords: field; dynamic magnetization; pulsed field; magnetization switching ... See more keywords
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Features of the quasi-static and dynamic magnetization switching in NiO nanoparticles: Manifestation of the interaction between magnetic subsystems in antiferromagnetic nanoparticles

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Published in 2020 at "Journal of Magnetism and Magnetic Materials"

DOI: 10.1016/j.jmmm.2020.167307

Abstract: Abstract We report on the investigations of a system of 8-nm NiO particles representing antiferromagnetic (AFM) materials, which are weak magnetic in the form of submicron particles, but can be considered to be magnetoactive in… read more here.

Keywords: interaction magnetic; quasi static; field; magnetization switching ... See more keywords
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Realization of resistive and magnetization switching in sol-gel derived yttrium iron garnet thin films

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Published in 2020 at "Thin Solid Films"

DOI: 10.1016/j.tsf.2020.137889

Abstract: Abstract In this work, large-area ferrite thin films of ferromagnetic yttrium iron garnet (Y3Fe5O12, YIG) were synthesized on Pt/Ti/SiO2/Si (Pt) substrates by a sol-gel method to investigate the resistive and magnetization switching properties. The synthesized… read more here.

Keywords: thin films; resistive magnetization; yttrium iron; magnetization switching ... See more keywords

Large Field-like Spin-Orbit Torque and Enhanced Magnetization Switching Efficiency Utilizing Amorphous Mo.

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Published in 2024 at "Nano letters"

DOI: 10.1021/acs.nanolett.4c01100

Abstract: Spin-orbit torque magnetic random access memory (SOT-MRAM) has great promise in high write speed and low power consumption. Mo can play a vital role in constructing a CoFeB/MgO-based MRAM cell because of its ability to… read more here.

Keywords: efficiency; orbit torque; spin orbit; orbit ... See more keywords

Spin Reflection-Induced Field-Free Magnetization Switching in Perpendicularly Magnetized MgO/Pt/Co Heterostructures.

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Published in 2022 at "ACS applied materials & interfaces"

DOI: 10.1021/acsami.1c22061

Abstract: Field-free magnetization switching is critical towards practical, integrated spin-orbit torque (SOT)-driven magnetic random-access memory with perpendicular magnetic anisotropy. Our work proposes a technique to modulate the spin reflection and spin density of states within a… read more here.

Keywords: magnetization switching; free magnetization; field free; field ... See more keywords

Magnetization switching in ferromagnets by adsorbed chiral molecules without current or external magnetic field

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Published in 2017 at "Nature Communications"

DOI: 10.1038/ncomms14567

Abstract: Ferromagnets are commonly magnetized by either external magnetic fields or spin polarized currents. The manipulation of magnetization by spin-current occurs through the spin-transfer-torque effect, which is applied, for example, in modern magnetoresistive random access memory.… read more here.

Keywords: external magnetic; chiral molecules; switching ferromagnets; magnetization switching ... See more keywords

Room temperature magnetization switching in topological insulator-ferromagnet heterostructures by spin-orbit torques

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Published in 2017 at "Nature Communications"

DOI: 10.1038/s41467-017-01583-4

Abstract: Topological insulators with spin-momentum-locked topological surface states are expected to exhibit a giant spin-orbit torque in the topological insulator/ferromagnet systems. To date, the topological insulator spin-orbit torque-driven magnetization switching is solely reported in a Cr-doped… read more here.

Keywords: spin orbit; magnetization switching; topological insulator; insulator ... See more keywords

Reconfigurable spintronic logic gate utilizing precessional magnetization switching

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Published in 2024 at "Scientific Reports"

DOI: 10.1038/s41598-024-65634-9

Abstract: In traditional von Neumann computing architecture, the efficiency of the system is often hindered by the data transmission bottleneck between the processor and memory. A prevalent approach to mitigate this limitation is the use of… read more here.

Keywords: memory; spintronic logic; precessional magnetization; reconfigurable spintronic ... See more keywords