Magnetoresistive Effect of Amorphous In-Ga-Zn-O Magnetic Field Sensors
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DOI: 10.1109/led.2017.2721422
Abstract: Magnetoresistive (MR) sensors made with amorphous In-Ga-Zn-O (a-IGZO) that have significant conventional or inverse MR effects at room temperature were fabricated. A high-temperature a-IGZO MR thin-film transistor exhibited a giant inverse MR effect of up… read more here.
Keywords: effect; magnetoresistive effect; field sensors; magnetic field ... See more keywords