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Published in 2023 at "Advanced materials"
DOI: 10.1002/adma.202211653
Abstract: Using field-effect transistors (FETs) to explore atomically thin magnetic semiconductors with transport measurements is difficult, because the very narrow bands of most 2D magnetic semiconductors cause carrier localization, preventing transistor operation. Here, we show that exfoliated…
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Keywords:
magnetotransport electrostatic;
crps4;
semiconductor;
gate controlled ... See more keywords