Growth of lattice-matched GaInAsP grown on vicinal GaAs(001) substrates within the miscibility gap for solar cells
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DOI: 10.1016/j.jcrysgro.2016.10.025
Abstract: Abstract The growth of quaternary Ga 0.68 In 0.32 As 0.35 P 0.65 by metal-organic vapor phase epitaxy is very sensitive to growth conditions because the composition is within a miscibility gap. In this investigation,… read more here.
Keywords: matched gainasp; microscopy; within miscibility; lattice matched ... See more keywords