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Published in 2018 at "Scientific Reports"
DOI: 10.1038/s41598-018-27507-w
Abstract: The electron and hole avalanche multiplication characteristics have been measured in bulk AlAs0.56Sb0.44 p-i-n and n-i-p homojunction diodes, lattice matched to InP, with nominal avalanche region thicknesses of ~0.6 μm, 1.0 μm and 1.5 μm.…
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Keywords:
ratio;
matched inp;
alas0 56sb0;
lattice matched ... See more keywords