Material lattice orientation effect of local Si 1-x Ge x stressors on the width dependence of high-k metal gate PMOSFETs
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DOI: 10.1016/j.cap.2017.11.015
Abstract: Abstract The novel material selection and fabrication became a major concern due to scaling limitations when the technology node was below 20 nm. Complex gate-last process step for high-k metal gate (HKMG) device was proposed to… read more here.
Keywords: material lattice; gate; metal gate; high metal ... See more keywords