3-D Analytical Modeling of Dual-Material Triple-Gate Silicon-on-Nothing MOSFET
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DOI: 10.1109/ted.2016.2643688
Abstract: A 3-D analytical model of a new structure, namely, dual-material triple-gate silicon-on-nothing MOSFET is proposed in this paper. 3-D Poisson’s equation with proper boundary conditions was solved to obtain the surface potential variation of the… read more here.
Keywords: gate silicon; silicon nothing; triple gate; material triple ... See more keywords