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Published in 2021 at "Advanced materials"
DOI: 10.1002/adma.202105022
Abstract: Redox-based resistive random access memories (ReRAM) are based on electrochemical redox processes at the electrode/electrolyte interfaces. The selection of materials and materials combinations strongly influence the related nanoscale interfacial processes, thus playing a crucial role…
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Keywords:
materials configuration;
redox based;
based resistive;
resistive switching ... See more keywords