Surface relaxation and rumpling of Sn-doped β -Ga 2 O 3 (010 )
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DOI: 10.1103/physrevb.102.245306
Abstract: We have studied the surface structure of single-crystal, wide-gap semiconductor $\ensuremath{\beta}\text{\ensuremath{-}}{\mathrm{Ga}}_{2}{\mathrm{O}}_{3}(010)$ using x-ray photoelectron diffraction (XPD), low-energy electron diffraction (LEED), and x-ray photoelectron spectroscopy (XPS). The XPS measurements show typical spectra for stoichiometric ${\mathrm{Ga}}_{2}{\mathrm{O}}_{3}(010)$. Annealing… read more here.
Keywords: 010 surface; mathrm 010; relaxation; ensuremath ... See more keywords