Optimized Dynamic $\text{R}_{ \mathrm{\scriptscriptstyle ON}}$ With p-Type Buried Layer Bridge in 700-V Triple RESURF nLDMOS
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2714703
Abstract: The dynamic on-resistance ( $\text{R}_{ \mathrm{\scriptscriptstyle ON}}$ ) problem widely exists in reduced surface field (RESURF) lateral DMOS (LDMOS), which leads to large conduction losses in the switching application. Analysing a 700-V triple RESURF LDMOS,… read more here.
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Modeling of a Vertical Tunneling Transistor Based on Graphene–MoS2 Heterostructure
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2716938
Abstract: In this paper, for the first time, we present a computational study on the electrical behavior of the field-effect tunneling transistor based on vertical graphene–MoS2 heterostructure and vertical graphene nanoribbon–MoS2 heterostructure. Our simulation is based… read more here.
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Metal-CH3NH3PbI3-Metal Tunnel FET
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2813522
Abstract: A novel-gated structure of aluminum (Al)—perovskite (CH3NH3PbI3)—indium tin oxide (ITO), with Al as source and ITO as drain terminals, has been reported. Ambipolar nature of CH3NH3PbI3 has been explored for the device channel. Two Schottky… read more here.
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Analysis of Metal Work-Function Modulation Effect in Reconfigurable Field-Effect Transistor
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DOI: 10.1109/ted.2020.3007364
Abstract: Work-function modulation in a reconfigurable field-effect transistor (RFET) is investigated by 3-D TCAD simulations. A significant work-function dependence is found in the critical electrical performances of RFET. The results show that the ON-state drive current… read more here.
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