Precise Layer‐Dependent Electronic Structure of MBE‐Grown PtSe 2
Sign Up to like & getrecommendations! Published in 2021 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202100559
Abstract: Lei Zhang, †,‡ Tong Yang, ‡,*, Muhammad Fauzi Sahdan, ‡,# Arramel, ‡ Wenshuo Xu, †,‡ Kaijian Xing, Yuan Ping Feng, ‡,# Wenjing Zhang, Zhuo Wang, †,* and Andrew T. S. Wee ‡,#,* SZU-NUS Collaborative Innovation… read more here.
Keywords: precise layer; mbe grown; electronic structure; dependent electronic ... See more keywords
Incorporation of hydrogen into MBE-grown dilute nitride GaInNAsSb layers in a MOCVD growth ambient
Sign Up to like & getrecommendations! Published in 2018 at "Solar Energy Materials and Solar Cells"
DOI: 10.1016/j.solmat.2018.05.043
Abstract: Abstract In this work, lattice-matched 3-junction and 4-junction solar cells including the dilute nitride subcells were fabricated by a hybrid growth technique of metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). It was… read more here.
Keywords: grown dilute; hydrogen; mbe grown; gainnassb ... See more keywords
Magnetoresistance oscillations in MBE-grown Sb2Te3 thin films
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.4977848
Abstract: We report on the Shubnikov–de Haas oscillations in the longitudinal resistance of thin films of three-dimensional topological insulator Sb2Te3 grown by means of molecular beam epitaxy. The oscillations persist up to the temperatures of 30 K,… read more here.
Keywords: thin films; mbe grown; magnetoresistance oscillations; grown sb2te3 ... See more keywords
Magnetic properties of MBE grown Mn4N on MgO, SiC, GaN and Al2O3 substrates
Sign Up to like & getrecommendations! Published in 2020 at "AIP Advances"
DOI: 10.1063/1.5130485
Abstract: Mn4N is a compound magnetic material that can be grown using MBE while exhibiting several desirable magnetic properties such as strong perpendicular magnetic anisotropy, low saturation magnetization, large domain size, and record high domain wall… read more here.
Keywords: grown mn4n; mbe grown; magnetic properties; mgo sic ... See more keywords
Donor implanted back-gates in GaAs for MBE-grown highest mobility two-dimensional electron systems
Sign Up to like & getrecommendations! Published in 2021 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ac0d9a
Abstract: Three different elements, silicon, selenium, and tellurium, are ion-implanted in gallium arsenide to form a conducting layer that serves as a back-gate to a molecular beam epitaxy overgrown two-dimensional electron gas. While the heavy ion… read more here.
Keywords: silicon selenium; mbe grown; two dimensional; back gate ... See more keywords
All MBE grown InAs/GaAs quantum dot lasers on on-axis Si (001).
Sign Up to like & getrecommendations! Published in 2018 at "Optics express"
DOI: 10.1364/oe.26.011568
Abstract: Directly grown III-V quantum dot (QD) laser on on-axis Si (001) is a good candidate for achieving monolithically integrated Si photonics light source. Nowadays, laser structures containing high quality InAs / GaAs QD are generally… read more here.
Keywords: inas gaas; lasers axis; mbe grown; axis 001 ... See more keywords