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Published in 2022 at "Nano letters"
DOI: 10.1021/acs.nanolett.2c01066
Abstract: HfO2-based films with high compatibility with Si and complementary metal-oxide semiconductors (CMOS) have been widely explored in recent years. In addition to ferroelectricity and antiferroelectricity, flexoelectricity, the coupling between polarization and a strain gradient, is…
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Keywords:
mechanical polarization;
5zr0 5o2;
hf0 5zr0;
film ... See more keywords