Reaction Mechanism of Area-Selective Atomic Layer Deposition for Al2O3 Nanopatterns.
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DOI: 10.1021/acsami.7b13365
Abstract: The reaction mechanism of area-selective atomic layer deposition (AS-ALD) of Al2O3 thin films using self-assembled monolayers (SAMs) was systematically investigated by theoretical and experimental studies. Trimethylaluminum (TMA) and H2O were used as the precursor and… read more here.
Keywords: al2o3; area selective; deposition; selective atomic ... See more keywords