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Published in 2022 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202101335
Abstract: Spin-Orbit Torque (SOT) Magnetic Random-Access Memories (MRAM) have shown promising results towards the realization of fast, non-volatile memory systems. Oxidation of the heavy-metal (HM) layer of the SOT-MRAM has been proposed as a method to…
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Keywords:
spin orbit;
orbit torques;
layer;
mechanism spin ... See more keywords