Improvement mechanism of sputtered AlN films by high-temperature annealing
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DOI: 10.1016/j.jcrysgro.2018.09.002
Abstract: Abstract The improvement mechanism of sputtered AlN films by high temperature annealing in nitrogen ambient has been investigated. Sputtered AlN films were annealed at 1100–1700 °C and their microstructures were observed by scanning transmission electron microscopy.… read more here.
Keywords: temperature; aln films; improvement mechanism; films high ... See more keywords