Temperature-dependent resistive switching statistics and mechanisms in nanoscale graphene-SiO2-graphene memristors.
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DOI: 10.1039/d5nr01019e
Abstract: The development of memristors presents a transformative opportunity to revolutionize electronic devices and computing systems by enabling non-volatile memory and neuromorphic computing. Silicon oxide memristors are particularly promising due to their potential for low cost,… read more here.
Keywords: mechanisms nanoscale; state; resistive switching; dependent resistive ... See more keywords