Charge scattering mechanisms in shallow InAs quantum wells
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DOI: 10.1063/1.5144680
Abstract: We studied the charge scattering mechanisms present in In0.2Al0.8Sb/InAs/Al0.8Ga0.2Sb wells placed in close proximity to the surface of the heterostructures, at depths from 7 nm to 15 nm. The heter... read more here.
Keywords: scattering mechanisms; charge scattering; inas quantum; mechanisms shallow ... See more keywords