Ohmic contact formation mechanisms of TiN film on 4H–SiC
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DOI: 10.1016/j.ceramint.2019.11.206
Abstract: Abstract The atomic structure, interfacial charge distribution, bonding nature, and interfacial electronic states of a 4H–SiC/TiN interface are systematically investigated to understand the Ohmic contact formation mechanisms of TiN to 4H–SiC. The experiment results clearly… read more here.
Keywords: mechanisms tin; ohmic contact; tin; contact formation ... See more keywords