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Published in 2017 at "Nanotechnology"
DOI: 10.1088/1361-6528/aa6dac
Abstract: A synaptic transistor emulating the biological synaptic motion is demonstrated using the memcapacitance characteristics in a Pt/HfOx/n-indium-gallium-zinc-oxide (IGZO) memcapacitor. First, the metal-oxide-semiconductor (MOS) capacitor with Pt/HfOx/n-IGZO structure exhibits analog, polarity-dependent, and reversible memcapacitance in capacitance-voltage…
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Keywords:
voltage;
hfox igzo;
synaptic transistor;
memcapacitance ... See more keywords