Some variants of Halley’s method with memory and their applications for solving several chemical problems
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DOI: 10.1007/s10910-020-01108-3
Abstract: In this paper, we develop some variants of the well-known Halley’s iterative method to solve nonlinear equations. The resulting methods are one-step methods, with and without memory, which use different number of functional evaluations per… read more here.
Keywords: method memory; applications solving; memory applications; variants halley ... See more keywords
Structural and optical properties of optimized amorphous GeTe films for memory applications
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Non-Crystalline Solids"
DOI: 10.1016/j.jnoncrysol.2018.07.007
Abstract: Abstract Chalcogenide amorphous materials, such as GeTe, are known to exhibit deposition dependent optical and structural properties. The formation of a single and homogeneous amorphous GeTe (a-GeTe) phase is questionable since the deposited films can… read more here.
Keywords: amorphous gete; phase; gete films; deposition ... See more keywords
MoS2-based ferroelectric field-effect transistor with atomic layer deposited Hf0.5Zr0.5O2 films toward memory applications
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DOI: 10.1063/5.0010829
Abstract: Recently, hafnium oxide (HfO2)-based ferroelectric materials have achieved phenomenal success in next-generation nonvolatile memory applications. In this study, we fabricated Hf0.5Zr0.5O2 (HZO) ferroelectric capacitors and back-gate field-effect transistors (FETs) with few-layered molybdenum disulfide (MoS2) nanosheets… read more here.
Keywords: atomic layer; hf0 5zr0; memory applications; based ferroelectric ... See more keywords
Si-Doped HfO2-Based Ferroelectric Tunnel Junctions with a Composite Energy Barrier for Non-Volatile Memory Applications
Sign Up to like & getrecommendations! Published in 2022 at "Materials"
DOI: 10.3390/ma15062251
Abstract: Ferroelectric tunnel junctions (FTJs) have attracted attention as devices for advanced memory applications owing to their high operating speed, low operating energy, and excellent scalability. In particular, hafnia ferroelectric materials are very promising because of… read more here.
Keywords: hfo2 based; doped hfo2; tunnel junctions; memory ... See more keywords