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Published in 2017 at "Advanced materials"
DOI: 10.1002/adma.201701780
Abstract: Animals possess various functional systems such as sensory, nervous, and motor systems, which show effective cooperation in order to realize complicated and intelligent behaviors. This inspires rational designs for the integration of individual electronic devices…
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Keywords:
memory device;
mechanical hybrid;
memory devices;
motion memory ... See more keywords
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Published in 2022 at "Advanced materials"
DOI: 10.1002/adma.202200659
Abstract: Vertically integrated NAND (V-NAND) flash memory is the main data storage in modern handheld electronic devices, widening its share even in the data centers where installation and operation costs are critical. While the conventional scaling…
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Keywords:
devices material;
flash memory;
semiconductor flash;
review semiconductor ... See more keywords
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Published in 2022 at "Advanced Materials"
DOI: 10.1002/adma.202201880
Abstract: With the advent of the Internet of Things and big data, massive data must be rapidly processed and stored within a short timeframe. This imposes stringent requirements on memory hardware implementation in terms of operation…
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Keywords:
integrated memory;
devices based;
based materials;
memory devices ... See more keywords
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Published in 2022 at "Advanced materials"
DOI: 10.1002/adma.202203909
Abstract: The search for ultra-fast photonic memory devices is inspired by the ever-increasing number of cloud computing, supercomputing, and artificial intelligence applications, together with the unique advantages of signal processing in the optical domain such as…
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Keywords:
memory;
memory devices;
phase change;
photonic memory ... See more keywords
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Published in 2022 at "Advanced Materials"
DOI: 10.1002/adma.202206864
Abstract: Ferroelectric materials have been intensively investigated for high‐performance nonvolatile memory devices in the past decades, owing to their nonvolatile polarization characteristics. Ferroelectric memory devices are expected to exhibit lower power consumption and higher speed than…
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Keywords:
memory neuromorphic;
ferroelectric transistors;
ferroelectric materials;
memory devices ... See more keywords
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Published in 2023 at "Advanced Science"
DOI: 10.1002/advs.202207443
Abstract: Logic‐in‐memory devices are a promising and powerful approach to realize data processing and storage driven by electrical bias. Here, an innovative strategy is reported to achieve the multistage photomodulation of 2D logic‐in‐memory devices, which is…
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Keywords:
logic memory;
surface;
organic inorganic;
strategy ... See more keywords
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Published in 2023 at "Advanced Science"
DOI: 10.1002/advs.202300057
Abstract: Organic phototransistors can enable many important applications such as nonvolatile memory, artificial synapses, and photodetectors in next‐generation optical communication and wearable electronics. However, it is still a challenge to achieve a big memory window (threshold…
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Keywords:
nanographene based;
phototransistor;
memory devices;
memory ... See more keywords
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Published in 2020 at "Advanced electronic materials"
DOI: 10.1002/aelm.201901320
Abstract: Organic nonvolatile memory devices have attracted increasing attention in both academia and industry due to their numerous advantages for application in charge storage media, including light weight, low cost, and flexibility.[1–3] Polymer electret memory (PEM)…
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Keywords:
minority;
physics;
memory devices;
pem devices ... See more keywords
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Published in 2017 at "Carbon"
DOI: 10.1016/j.carbon.2017.05.004
Abstract: Abstract In this work, we report for the first time the resistive switching behavior of a new type of device made of carbon nanowalls (CNWs) deposited on fluorine-doped tin oxide (FTO) substrate. This new device…
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Keywords:
devices carbon;
memory devices;
carbon nanowalls;
resistive switching ... See more keywords
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Published in 2019 at "Ceramics International"
DOI: 10.1016/j.ceramint.2018.12.038
Abstract: Abstract Perovskite-based Cs4PbBr6 has potential applications in optoelectronic devices, such as photodetectors, electroluminescence devices and color converters. All-inorganic perovskite Cs4PbBr6 thin films were successfully prepared by a simple low-temperature synthesis method and were first implemented…
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Keywords:
cs4pbbr6;
memory;
inorganic perovskite;
resistive switching ... See more keywords
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Published in 2019 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2019.151999
Abstract: Abstract In this study, we demonstrated long-term stability in the resistive switching (RS) properties of MAPbI3 films, coated via a one-step chemical vapor deposition (CVD) method using no additives or polymers. The RS behavior of…
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Keywords:
air stability;
stability;
extended air;
memory devices ... See more keywords