Stretchable Motion Memory Devices Based on Mechanical Hybrid Materials.
Sign Up to like & getrecommendations! Published in 2017 at "Advanced materials"
DOI: 10.1002/adma.201701780
Abstract: Animals possess various functional systems such as sensory, nervous, and motor systems, which show effective cooperation in order to realize complicated and intelligent behaviors. This inspires rational designs for the integration of individual electronic devices… read more here.
Keywords: memory device; mechanical hybrid; memory devices; motion memory ... See more keywords
Review of Semiconductor Flash Memory Devices for Material and Process Issues.
Sign Up to like & getrecommendations! Published in 2022 at "Advanced materials"
DOI: 10.1002/adma.202200659
Abstract: Vertically integrated NAND (V-NAND) flash memory is the main data storage in modern handheld electronic devices, widening its share even in the data centers where installation and operation costs are critical. While the conventional scaling… read more here.
Keywords: devices material; flash memory; semiconductor flash; review semiconductor ... See more keywords
Integrated Memory Devices Based on 2D Materials
Sign Up to like & getrecommendations! Published in 2022 at "Advanced Materials"
DOI: 10.1002/adma.202201880
Abstract: With the advent of the Internet of Things and big data, massive data must be rapidly processed and stored within a short timeframe. This imposes stringent requirements on memory hardware implementation in terms of operation… read more here.
Keywords: integrated memory; devices based; based materials; memory devices ... See more keywords
Neuromorphic Photonic Memory Devices Using Ultrafast, Non-volatile Phase-change Materials.
Sign Up to like & getrecommendations! Published in 2022 at "Advanced materials"
DOI: 10.1002/adma.202203909
Abstract: The search for ultra-fast photonic memory devices is inspired by the ever-increasing number of cloud computing, supercomputing, and artificial intelligence applications, together with the unique advantages of signal processing in the optical domain such as… read more here.
Keywords: memory; memory devices; phase change; photonic memory ... See more keywords
Ferroelectric Transistors for Memory and Neuromorphic Device Applications
Sign Up to like & getrecommendations! Published in 2022 at "Advanced Materials"
DOI: 10.1002/adma.202206864
Abstract: Ferroelectric materials have been intensively investigated for high‐performance nonvolatile memory devices in the past decades, owing to their nonvolatile polarization characteristics. Ferroelectric memory devices are expected to exhibit lower power consumption and higher speed than… read more here.
Keywords: memory neuromorphic; ferroelectric transistors; ferroelectric materials; memory devices ... See more keywords
Ultrafast Non‐Volatile Floating‐Gate Memory Based on All‐2D Materials
Sign Up to like & getrecommendations! Published in 2024 at "Advanced Materials"
DOI: 10.1002/adma.202311652
Abstract: The explosive growth of massive‐data storage and the demand for ultrafast data processing require innovative memory devices with exceptional performance. 2D materials and their van der Waal heterostructures with atomically sharp interfaces hold great promise… read more here.
Keywords: non volatile; memory devices; memory; floating gate ... See more keywords
Controlling Isomerization of Photoswitches to Modulate 2D Logic‐in‐Memory Devices by Organic–Inorganic Interfacial Strategy
Sign Up to like & getrecommendations! Published in 2023 at "Advanced Science"
DOI: 10.1002/advs.202207443
Abstract: Logic‐in‐memory devices are a promising and powerful approach to realize data processing and storage driven by electrical bias. Here, an innovative strategy is reported to achieve the multistage photomodulation of 2D logic‐in‐memory devices, which is… read more here.
Keywords: logic memory; surface; organic inorganic; strategy ... See more keywords
Nanographene‐Based Heterojunctions for High‐Performance Organic Phototransistor Memory Devices
Sign Up to like & getrecommendations! Published in 2023 at "Advanced Science"
DOI: 10.1002/advs.202300057
Abstract: Organic phototransistors can enable many important applications such as nonvolatile memory, artificial synapses, and photodetectors in next‐generation optical communication and wearable electronics. However, it is still a challenge to achieve a big memory window (threshold… read more here.
Keywords: nanographene based; phototransistor; memory devices; memory ... See more keywords
From Unipolar, WORM‐Type to Ambipolar, Bistable Organic Electret Memory Device by Controlling Minority Lateral Transport
Sign Up to like & getrecommendations! Published in 2020 at "Advanced electronic materials"
DOI: 10.1002/aelm.201901320
Abstract: Organic nonvolatile memory devices have attracted increasing attention in both academia and industry due to their numerous advantages for application in charge storage media, including light weight, low cost, and flexibility.[1–3] Polymer electret memory (PEM)… read more here.
Keywords: minority; physics; memory devices; pem devices ... See more keywords
Inkjet‐Printed Phase Change Memory Devices
Sign Up to like & getrecommendations! Published in 2024 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202400203
Abstract: Phase change memory (PCM) is among the most promising candidates for the next generation of storage‐class and main memory systems in the computing era beyond Moore's law. However, the widespread installment of PCM devices is… read more here.
Keywords: phase change; memory devices; change memory; memory ... See more keywords
Highly C‐axis Aligned ALD‐InGaO Channel Improving Mobility and Thermal Stability for Next‐Generation 3D Memory Devices
Sign Up to like & getrecommendations! Published in 2024 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202400377
Abstract: A way to obtain highly ordered and thermally stable crystalline In–Ga–O (IGO) thin films is reported by atomic layer deposition with novel bulky dimethyl[N‐(tert‐butyl)−2‐methoxy‐2‐methylpropan‐1‐amine] gallium precursor. The optimal cation composition for IGO (In:Ga = 4:1… read more here.
Keywords: generation memory; memory devices; mobility; next generation ... See more keywords