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Published in 2021 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2021.107960
Abstract: Abstract Z2-FET, a partially gated diode, was explored for ESD protection due to its sharp switching behavior and is also a promising candidate for 1T-DRAM application. Based on detailed TCAD simulations, we develop a pragmatic…
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Keywords:
compact model;
memory operation;
memory;
model including ... See more keywords