Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD‐Grown 2D Layered Ge4Se9
Sign Up to like & getrecommendations! Published in 2022 at "Advanced Materials"
DOI: 10.1002/adma.202204982
Abstract: Van der Waals (vdW) heterostructures have drawn much interest over the last decade owing to their absence of dangling bonds and their intriguing low‐dimensional properties. The emergence of 2D materials has enabled the achievement of… read more here.
Keywords: van der; memory window; der waals; layered ge4se9 ... See more keywords
High-Performance Ferroelectric Thin Film Transistors with Large Memory Window Using Epitaxial Yttrium-Doped Hafnium Zirconium Gate Oxide.
Sign Up to like & getrecommendations! Published in 2024 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.3c16427
Abstract: Preventing ferroelectric materials from losing their ferroelectricity over a low thickness of several nanometers is crucial in developing multifunctional nanoelectronics. Epitaxially grown 5 at. % yttrium-doped Hf0.5Zr0.5O2 (YHZO) thin films exhibit an atomically smooth surface,… read more here.
Keywords: memory window; memory; yttrium doped; ferroelectric thin ... See more keywords
Ferroelectric transistors with asymmetric double gate for memory window exceeding 12 V and disturb-free read.
Sign Up to like & getrecommendations! Published in 2021 at "Nanoscale"
DOI: 10.1039/d1nr05107e
Abstract: Ferroelectric field-effect transistors (FeFETs) with a single gate structure and using the newly discovered ferroelectric hafnium oxide as an active material are attracting considerable interest for nonvolatile memory devices. However, such FeFETs struggle to achieve… read more here.
Keywords: memory window; double gate; free read; disturb free ... See more keywords
Deep insights into the mechanism of nitrogen on the endurance enhancement in ferroelectric field effect transistors: Trap behavior during memory window degradation
Sign Up to like & getrecommendations! Published in 2024 at "Applied Physics Letters"
DOI: 10.1063/5.0196442
Abstract: The nitridation process can significantly improve the quality of the interfacial layer and suppress the unrecoverable electron trapping of the interfacial states during cycling, which is the main cause of endurance enhancement. In this work,… read more here.
Keywords: memory window; degradation; endurance enhancement; window degradation ... See more keywords
Dynamic pricing with stochastic reference effects based on a finite memory window
Sign Up to like & getrecommendations! Published in 2017 at "International Journal of Production Research"
DOI: 10.1080/00207543.2016.1221160
Abstract: Inspired by the latest empirical studies, we propose a new updating model for reference prices by assuming that consumers’ memories are limited and their recall of previous prices obeys a first-order Markov stochastic process. We… read more here.
Keywords: memory window; reference effects; reference; dynamic pricing ... See more keywords
Disturb and its Mitigation in Ferroelectric Field-Effect Transistors With Large Memory Window for NAND Flash Applications
Sign Up to like & getrecommendations! Published in 2024 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2024.3467210
Abstract: We study the disturb characteristics of ferroelectric field-effect transistors (FEFETs) with band-engineered gate stacks. We demonstrate that integrating a dielectric Al2O3 layer within the ferroelectric (FE) Hf $_{{0}.{5}}$ Zr $_{{0}.{5}}$ O2 layer in the gate… read more here.
Keywords: memory window; memory; ferroelectric field; disturb ... See more keywords
Toward the Ultimate Memory Window Enhancement of Nanoscale Hf0.5Zr0.5O2 FeFETs With Interface and Strain Engineering
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2025.3610413
Abstract: In this work, HfO2/Ozone SiO2 interfacial layer (IL) and ZnS:SiO2 (ZSO) liner stressor are novelly integrated with nanoscale Hf0.5Zr0.5O2 (HZO) FeFETs for the memory window (MW) enhancement. With the HfO2/Ozone SiO2 IL engineering, the MW… read more here.
Keywords: window enhancement; sub; memory window; sub sub ... See more keywords
Understanding the Memory Window of Ferroelectric FET and Demonstration of 4.8-V Memory Window With 20-nm HfO2
Sign Up to like & getrecommendations! Published in 2024 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2024.3418942
Abstract: In this work, with the goal of developing a large memory window (MW) ferroelectric field-effect transistor (FeFET) for high-density stand-alone storage applications, we provide a deep look into the MW of a FeFET and clarify… read more here.
Keywords: memory window; window ferroelectric; memory; dielectric layer ... See more keywords
Impact of Channel Material, Interface Quality, and Polarization on Memory Window of Interfacial Layer-Free FeFET With Oxide Semiconductor
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2025.3589546
Abstract: This study systematically investigates the modulation of the memory window (MW) in interfacial layer (IL)-free and Hfx $Zr_{{1}-{x}}$ O2 (HZO)-based ferroelectric field-effect transistors (FeFETs) with oxide channel by engineering oxide semiconductor materials, annealing processes, and… read more here.
Keywords: layer; semiconductor; memory window; oxide semiconductor ... See more keywords