Pulse frequency dependent synaptic characteristics in Ta/SiN/Si memristor device for neuromorphic system
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DOI: 10.1016/j.jallcom.2021.160760
Abstract: Abstract We compare the filamentary resistive switching and the homogeneous resistive switching of the Ta/SiN/Si memristor device for the implementation of hardware-based neuromorphic system. The switching mode can be determined by the first switching curve.… read more here.
Keywords: neuromorphic system; memristor device; frequency dependent; resistive switching ... See more keywords