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Published in 2025 at "Nanomaterials"
DOI: 10.3390/nano15171365
Abstract: Gallium oxide (Ga2O3)-based memristors are gaining traction as promising candidates for next-generation electronic devices toward in-memory computing, leveraging the unique properties of Ga2O3, such as its wide bandgap, high thermodynamic stability, and chemical stability. This…
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Keywords:
gallium oxide;
oxide memristors;
memristors review;
based memristors ... See more keywords