AlN-based unipolar memristors with symmetrical Al electrodes: Preparation, characterization, and test
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DOI: 10.1063/5.0279814
Abstract: Ultra-wide-bandgap semiconductor aluminum nitride (AlN) has demonstrated many excellent characteristics and is a promising candidate for advanced memristor dielectrics. Numerous stacked structures have been attempted in recent years, but research on simpler symmetrical electrodes structure… read more here.
Keywords: unipolar memristors; aln based; symmetrical electrodes; memristors symmetrical ... See more keywords