Uniform and High Gain GaN p-i-n Ultraviolet APDs Enabled by Beveled-Mesa Edge Termination
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DOI: 10.1109/lpt.2020.3025290
Abstract: In this letter, a beveled-mesa edge termination technology was developed to improve the performance of GaN p-i-n ultraviolet avalanche photodiodes (APDs). Simulation results showed that the beveled-mesa is effective in reduction of the electric field… read more here.
Keywords: beveled mesa; apds; mesa edge; edge termination ... See more keywords