Junction-based deep mesa termination for multi-kilovolt vertical β -Ga2O3 power devices
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DOI: 10.1063/5.0251699
Abstract: Deep mesa is an effective edge termination widely deployed in high-voltage power devices. However, its effectiveness requires the minimal distance between mesa and electrode edge and is susceptible to charges in the dielectric passivation, posing… read more here.
Keywords: deep mesa; mesa termination; termination; mesa ... See more keywords
Over 450 V breakdown voltage in diamond vertical Schottky barrier diodes with anodic self-aligned mesa termination
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DOI: 10.1063/5.0274905
Abstract: In this work, diamond vertical Schottky barrier diodes (SBDs) with anodic self-aligned mesa termination were proposed and investigated. This kind of termination structure can effectively alleviate the electric field crowding at the Schottky electrode edge… read more here.
Keywords: diamond vertical; mesa termination; termination; voltage ... See more keywords
Self-aligned implanted mesa termination enables a high BFOM of 1.64 GW/cm2 and non-edge junction breakdown for vertical GaN SBDs
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DOI: 10.1063/5.0282412
Abstract: This work demonstrates a self-aligned implanted mesa termination for GaN-on-GaN vertical Schottky barrier diodes (SBDs), and studies its effects on electrical characteristics and breakdown behaviors of diodes. A self-aligned mesa termination with nitrogen implantation (SNT)… read more here.
Keywords: aligned implanted; edge; mesa termination; termination ... See more keywords