Ion-Induced Mesoplasma Formation and Thermal Destruction in 4H-SiC Power MOSFET Devices
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DOI: 10.1109/tns.2021.3068196
Abstract: Both experiments and simulations have shown that single-event burnout (SEB), a catastrophic event, occurs at less than half of the rated blocking voltage in commercial 4H-SiC power devices under a heavy-ion strike. The failure was… read more here.
Keywords: power mosfet; mesoplasma formation; failure; ion ... See more keywords