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Published in 2018 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2018.05.002
Abstract: Abstract Low-Schottky barrier height (SBH) metal contacts to 2D materials is indispensable for achieving high performance in atomic layer 2D materials channel based optoelectronic devices. In this study, we systematically investigate the detailed face contact…
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Keywords:
metal contacts;
metal;
nitride gan;
gallium nitride ... See more keywords
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Published in 2017 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.7b00357
Abstract: Schottky barrier height and carrier polarity are seminal concepts for a practical device application of the interface between semiconductor and metal electrode. Investigation of those concepts is usually made by a conventional method such as…
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Keywords:
metal;
layer;
metal contacts;
schottky barrier ... See more keywords
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Published in 2017 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.7b06160
Abstract: HfS2 is one of the emerging transition metal dichalcogenides and is very promising for low-power nanoelectronics and high-sensitivity optoelectronic device applications. We studied the band structures of 1T-HfS2 with different thicknesses by first principles simulation,…
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Keywords:
hfs2 field;
metal contacts;
microscopy;
effect transistors ... See more keywords
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Published in 2017 at "Nanotechnology"
DOI: 10.1088/1361-6528/aa5ec2
Abstract: The possible origins of metal-bilayer graphene (BLG) contact resistance are investigated by taking into consideration the bandgap formed by interfacial charge transfer at the metal contacts. Our results show that a charge injection barrier (Schottky…
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Keywords:
contact resistance;
contact doping;
metal contacts;
resistance ... See more keywords