Performance investigation of heterogeneous gate dielectric-gate metal engineered–gate all around-tunnel FET for RF applications
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DOI: 10.1007/s00542-016-3143-5
Abstract: In this work, the effect of gate metal work function engineering (GME), gate bias and drain bias on the bias dependent parasitic capacitances has been studied. Further, RF Figure of merits (FOMs) such as power… read more here.
Keywords: engineered gate; gate metal; metal engineered; gate ... See more keywords