A model for nonvolatile p-channel metal–ferroelectric–metal–insulator–semiconductor field-effect transistors (MFMIS FETs)
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-019-01320-8
Abstract: An improved theoretical model for metal–ferroelectric–metal–insulator–semiconductor field-effect transistors (MFMIS FETs) is presented. The basic theory describing the ferroelectric behavior is replaced by the dipole switching theory (DST) because of its deeper physical meaning and its… read more here.
Keywords: metal; metal ferroelectric; ferroelectric metal; field effect ... See more keywords
Flexoelectricity in a metal/ferroelectric/semiconductor heterostructure
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DOI: 10.1063/1.5031162
Abstract: The flexoelectricity in a 100 nm-thick BaTiO3 (BTO) thin film based metal/ferroelectric insulator/semiconductor (MFS) heterostructure was reported in this letter. The transverse flexoelectric coefficient of the BTO thin film in the heterojunction structure was measured… read more here.
Keywords: metal ferroelectric; flexoelectricity; semiconductor; thin film ... See more keywords
Low-Frequency Noise Characteristics in HfO2-Based Metal-Ferroelectric-Metal Capacitors
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DOI: 10.3390/ma15217475
Abstract: The transport mechanism of HfO2-based metal-ferroelectric-metal (MFM) capacitors was investigated using low-frequency noise (LFN) measurements for the first time. The current–voltage measurement results revealed that the leakage behavior of the fabricated MFM capacitor was caused… read more here.
Keywords: hfo2 based; noise; metal ferroelectric; based metal ... See more keywords
Enhancement of Ferroelectricity in 5 nm Metal-Ferroelectric-Insulator Technologies by Using a Strained TiN Electrode
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DOI: 10.3390/nano12030468
Abstract: In this work, the ferroelectric characteristic of a 5 nm Hf0.5Zr0.5O2 (HZO) metal-ferroelectric-insulator-semiconductor (MFIS) device is enhanced through strained complementary metal oxide semiconductor (CMOS)-compatible TiN electrode engineering. Strained TiN top-layer electrodes with different nitrogen (N)… read more here.
Keywords: tin electrode; metal ferroelectric; ferroelectric insulator; strained tin ... See more keywords